Patents
- These are some of the patents behind our products
US Patent 6951130- Software synchronization of multiple scanning probes
- A method and apparatus for scanning multiple scanning probe microscopes in close proximity, to scan overlapping scan areas at the same time while avoiding collision employs a control system providing drive signals to a first Atomic Force Microscope (AFM) and calculated drive signals to additional AFMs based on the first drive signals and the relative position of the additional AFMs to the first AFM for consistent spaced motion. Scanning and Failure Analysis (FA) probing of multiple feature of interest using multiple APMs allows for reduced time for locating FA features to set up measurements.
Download US Patent 6951130.pdf
US Patent 6880389- Software synchronization of multiple scanning probes
- A method and apparatus for scanning multiple scanning probe microscopes in close proximity, to scan overlapping scan areas at the same time while avoiding collision employs a control system providing drive signals to a first Atomic Force Microscope (AFM) and calculated drive signals to additional AFMs based on the first drive signals and the relative position of the additional AFMs to the first AFM for consistent spaced motion. Scanning and Failure Analysis (FA) probing of multiple feature of interest using multiple APMs allows for reduced time for locating FA features to set up measurements.
Download US Patent 6880389.pdf
US Patent RE37404- Detection system for atomic force microscopes
- A scanning probe microscope is provided with a piezo-ceramic tube to carry the sensitive probe at its free end to translationally move the probe in the X and Y directions. Large stationary surfaces can then be scanned by probe tip motion. The tube is also capable of movement in the Z direction so that the tip can follow the contours of the surface. Optical detection means track the motion of the probe tip and generate signals corresponding to and representative of surface contours. In one mode of operation, the signals are used in a feed back loop to keep constant the spacing between the tip and the surface, in which case the error or control signals represent the contours.
- Download US Patent RE37404.pdf
US Patent 6287880- Method and apparatus for high resolution profiling in semiconductor structures
- A method for determining the characteristics of a doped semiconductor substrate is disclosed, wherein a scanning probe microscope, preferably an atomic force microscope, is used to move a probe across a sample surface gathering electrical measurements at many locations. The probe tip is conductive and is connected to a control circuit that applies a voltage to the probe and to an electrode fixed to the semiconductor substrate. Preferably, the current that flows through the sample is measured and saved, together with the position of the probe on the surface of the sample. In this manner, the characteristics of the doped sample can be determined at many different locations with many different degrees of doping. The sample is prepared by doping its top surface, then machining off the top surface to provide access to the sample at different doping depths. By driving the probe back and forth across the surface and taking readings of the sample at many different locations, a map of the electrical,characteristics at various doping depths below the top surface can be developed. By using a single scanning probe, that probe can be manufactured to have an extremely small radius of curvature, and hence a much smaller contact spot on the surface of the sample.
Download US Patent 6287880.pdf
US Patent 5713667- Temperature sensing probe for microthermometry
- A diode is formed at the tip of a pointed portion of a probe of a scanning probe microscope. When the diode is forward biased, the current through the diode varies with the temperature of the diode. The magnitude of the current is an indication of the temperature of the tip of the probe. If the tip is scanned over a surface, a thermal map of the surface can be made and hot spots on the surface located. In some embodiments, the pointed portion of the probe is made of a semiconductor material (for example, silicon). A layer of a metal (for example, platinum) is made to contact the semiconductor material of the pointed portion only at the tip of the pointed portion, thereby forming a very small temperature sensing Schottky diode at the tip of the pointed portion.
Download US Patent 5713667.pdf
US Patent 5710052- Scanning spreading resistance probe
- An accurate method of measuring the two-dimensional doping profile of a semiconductor by measuring an electrical parameter along a path of a dopant iso-concentration. Thin vertical or horizontal slices of the semiconductor integrated circuit are provided and are probed to allow the electrical parameter to be measured through a single concentration area.
Download US Patent 5710052.pdf